Combined APD / PIN InGaAs photodetector with microlens structure and method of manufacture
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United States of America Patent
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Issued Date -
Jan 18, 2007
app pub date -
Jul 15, 2005
filing date -
Jul 15, 2005
priority date (Note) -
Abandoned
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Abstract
An InGaAs photodetector is provided having an avalanche photodiode (APD), a p-intrinsic-n (PIN) photodiode, and a microlens structure that provides high optical fill factors for both the APD and the PIN photodiodes. The photodetector can be used for both ranging and imaging applications, can be formed as a single pixel, and multiple pixels can be fabricated to form a focal plane array. A method of fabricating the photodiode is also provided.
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