Back-biased face target sputtering based memory with low oxygen flow rate
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United States of America Patent
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app pub date -
Sep 14, 2006
filing date -
Sep 15, 2003
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Abstract
Systems and methods are disclosed to form an exemplary memory structure by flowing argon gas and oxygen gas in a deposition chamber; providing a low oxygen flow rate approximately between 0 and ten percent (10%) of an argon flow rate, a pressure approximately between 2.times.10.sup.-5 Torr and 1.times.10.sup.-3 Torr, and a deposition temperature approximately between 340.degree. C. and 450.degree. C.; and the composition of sputtering target is PCMO (Pr.sub.1-xCa.sub.XMnO.sub.3, where X is between 0.1 and 0.9). The process forms a PCMO (Pr.sub.1-xCa.sub.XMnO.sub.3, X=0.1-0.9) material film on the wafer.
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