Method and apparatus for forming a crystalline silicon thin film
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Sep 12, 2006
filing date -
Mar 26, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A hydrogen gas is supplied into a deposition chamber (10) accommodating a silicon sputter target (2) and a deposition target substrate (S), a high-frequency power is applied to the gas to generate plasma exhibiting H.alpha./SiH* from 0.3 to 1.3 in the deposition chamber, and chemical sputtering is effected on the silicon sputter target (2) by the plasma to form a crystalline silicon thin film on the substrate (2). A crystalline silicon thin film of a good quality can be formed inexpensively and safely at a relatively low temperature.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully