Polar surface preparation of nitride substrates

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United States of America Patent

APP PUB NO 20060288929A1
SERIAL NO

11448595

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Abstract

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Fabrication of AlN substrates suitable for epitaxial deposition of high-quality nitride-based compounds thereon having at least one single-crystal and substantially planarized useful area exceeding about 1 cm.sup.2 with a peak-to-valley surface topography in the useful area being less than about 50 nm is accomplished by, for example, employing an active solution that reacts non-selectively with the substrate material.

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Patent Owner(s)

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CRYSTAL IS INC70 COHOES AVENUE GREEN ISLAND NY 12183

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Meyer, Nicholas R Mechanicville, NY 1 32
Schowalter, Leo J Latham, NY 87 1665
Schujman, Sandra B Niskayuna, NY 7 165
Slack, Glen A Scotia, NY 42 1293

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