Copolymer for semiconductor lithography, composition and thiol compound
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United States of America Patent
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Issued Date -
Dec 21, 2006
app pub date -
Jun 1, 2006
filing date -
Jun 3, 2005
priority date (Note) -
Abandoned
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Abstract
The present invention provides a copolymer for semiconductor lithography, comprising: at least, a recurring unit (A) having a structure wherein an alkali-soluble group has been protected with an acid-dissociating, dissolution-suppressing group, and a terminal structure (F) represented by the following formula (F): (wherein X.sub.1 and X.sub.2 are each independently a hydrogen atom, a halogen atom or a hydrocarbon group of 1 to 4 carbon atoms which may be substituted with halogen atom; Y.sub.11 to Y.sub.14 are a hydrogen atom, or an ether bond or a hydrocarbon bond of 1 to 2 carbon atoms, each formed between Y.sub.11 and Y.sub.12 or between Y.sub.13 and Y.sub.14; Y.sub.21 to Y.sub.25 are each independently a hydrogen atom or a hydrocarbon group of 1 to 4 carbon atoms; and n is an integer of 0 or 1); a composition containing the copolymer; and a thiol compound giving the copolymer. The copolymer of the present invention, when used in semiconductor lithography, is superior in lithography properties such as development contrast, DOF and the like.
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