MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material
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United States of America Patent
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Issued Date -
Dec 21, 2006
app pub date -
Jun 14, 2006
filing date -
Jun 17, 2005
priority date (Note) -
Abandoned
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Abstract
Disclosed is an electronic device with a layer succession of the metal-insulator-metal (MIM) or metal-insulator-semiconductor (MIS) kind. The insulator layer contains or consists of praseodymium titanate. A metal layer or both metal layers contain titanium nitride (TiN), tantalum nitride (TaN) or ruthenium oxide (RuO.sub.2) or consist of one of those materials. MIM capacitors for mixed signal and HF applications comprising titanium nitride electrodes and an SiO.sub.2/Pr.sub.2Ti.sub.2O.sub.7 layer stack as the dielectric exhibit a high capacitance density of 8 fF/.mu.m.sup.2 at the very low VCC of -40 ppm/V.sup.2. The guaranteed operating voltage extrapolated to 10 years is 6 V.
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