Apparatus and method for enhanced critical dimension scatterometry
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United States of America Patent
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Issued Date -
Dec 21, 2006
app pub date -
Feb 24, 2006
filing date -
Feb 25, 2005
priority date (Note) -
Abandoned
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Abstract
Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.
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