Integrated circuit and method for manufacturing an integrated circuit
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United States of America Patent
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Issued Date -
Dec 14, 2006
app pub date -
Jun 14, 2006
filing date -
Jun 14, 2005
priority date (Note) -
Abandoned
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Abstract
An integrated circuit is disclosed that includes a component region with at least one NDMOS transistor and at least one PDMOS transistor and a substrate, which is isolated from the component region by a dielectric, whereby the component region, dielectric, and substrate form a first substrate capacitance standardized to a unit area in a first region of the PDMOS transistor and a second substrate capacitance standardized to said unit area in a second region of the NDMOS transistor, and whereby the first substrate capacitance standardized to said unit area is reduced in comparison to the second substrate capacitance standardized to said unit area.
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