Electrochemical method for the direct nanostructured deposition of material onto a substrate, and semiconductor component produced according to said method

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United States of America Patent

APP PUB NO 20060269688A1
SERIAL NO

10553102

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Abstract

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A method of fabricating a nano-scaled semiconductor by depositing upon a substrate, within the confines of a narrowly limited electric field, from an adjustable mixture of precursor gases containing different precursor compounds, nano-scaled deposits of common chemical compounds released in consequence of the precursor compounds breaking down upon the simultaneous or sequential application of a voltage exceeding a predetermined threshold value.

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Patent Owner(s)

Patent OwnerAddress
HAHN-MEITNER-INSTITUT BERLINGLIENICKER STRASSE 100 D-14109 BERLIN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Glatzel, Thilo Inzlingen, DE 1 5
Lux-Steiner, Martha Berlin, DE 1 5
Sadewasser, Sascha Berlin, DE 4 19

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