ESD protection structure
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United States of America Patent
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N/A
Issued Date -
Nov 30, 2006
app pub date -
May 31, 2006
filing date -
May 31, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An ESD protection structure for an electronic circuit arrangement, in particular for a HF power amplifier is provided. In the ESD protection structure, at least two semiconductor diodes are connected anti-serial to one another. Further, the pn junctions of the two semiconductor diodes possess a common zone of semiconductor material of a certain conductivity type. Thus, an ESD protection structure is provided that can be used even at relatively high frequencies, which offers a reliable protective effect in the event of overvoltages with improved modulation capability in the HF range without resulting in signal distortion during operation.
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