Schottky barrier diode and method of producing the same
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United States of America Patent
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Issued Date -
Nov 30, 2006
app pub date -
May 24, 2006
filing date -
May 25, 2005
priority date (Note) -
Abandoned
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Abstract
An epitaxial layer 12 is formed on a semiconductor substrate comprising silicon carbide, a Schottky electrode 14 is formed surface of the epitaxial layer 12, a noble metal contact electrode is formed on the Schottky electrode 14, and after the formation this contact electrode 15, heat treatment is conducted at a temperature of from 600 to 1,000.degree. C.
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