Semiconductor device with capacitor structure for improving area utilization
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United States of America Patent
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Issued Date -
Nov 23, 2006
app pub date -
Feb 14, 2006
filing date -
Feb 15, 2005
priority date (Note) -
Abandoned
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Abstract
A semiconductor device with a capacitor structure for improving area utilization comprises a plurality of electrically conductive layers and a plurality of dielectric layers. The dielectric layers and the electrically conductive layers are alternately superposed one over another, and the electrically conductive layers are alternately electrically connected.
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