Photodetector
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United States of America Patent
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Issued Date -
Nov 23, 2006
app pub date -
Mar 30, 2006
filing date -
May 18, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A photodetector is disclosed, comprising: a substrate; a GaN-related material layer of a first conductivity type located on the substrate; an intrinsic layer located on a portion of the GaN-related material layer of the first conductivity type; a first GaN-related material layer of a second conductivity type located on the intrinsic layer; a second GaN-related material layer of the second conductivity type located on the first GaN-related material layer of the second conductivity type; an electrode of the second conductivity type located on a portion of the second GaN-related material layer of the second conductivity type; and an electrode of the first conductivity type located on another portion of the GaN-related material layer of the first conductivity type.
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