Atomic layer deposition of high-k metal oxides
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United States of America Patent
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N/A
Issued Date -
Nov 16, 2006
app pub date -
Aug 18, 2003
filing date -
Aug 18, 2002
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention relates to the atomic layer deposition ('ALD') of high k dielectric layers of metal oxides containing Group 4 metals, including hafnium oxide, zirconium oxide, and titanium oxide. More particularly, the present invention relates to the ALD formation of Group 4 metal oxide films using an metal alkyl amide as a metal organic precursor and ozone as a co-reactant.
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| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| TW | A | TW200408323 | Aug 15, 2003 |
| WO | A2 | WO2004017377 | Aug 18, 2003 |
| CN | C | CN100468648 | Aug 18, 2003 |
| JP | A | JP2005536063 | Aug 18, 2003 |
| AU | A1 | AU2003263872 | Aug 18, 2003 |
| EP | A2 | EP1535319 | Aug 18, 2003 |
| KR | A | KR20050072087 | Feb 18, 2005 |
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Cited Art Landscape
Patent Citation Ranking
- 505 Citation Count
- H01L Class
- 96.53 % this patent is cited more than
- 19 Age