Single-crystalline gallium nitride substrate
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United States of America Patent
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Issued Date -
Nov 16, 2006
app pub date -
May 12, 2006
filing date -
May 12, 2005
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Abandoned
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Abstract
The present invention relates to a single-crystalline gallium nitride substrate having an n-doping concentration of about 0.7.times.10.sup.18 to about 3.times.10.sup.18/cm.sup.3 and a thermal conductivity of at least about 1.5 W/cmK at a room temperature (300 K), and being appropriately applied in manufacturing of a light emitting device.
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