Field effect transistor structures
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United States of America Patent
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app pub date -
Jun 19, 2006
filing date -
Jun 21, 2004
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Abandoned
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Abstract
An embodiment of the present invention provides a structure comprising a field effect transistor (FET) comprising: at least one source rail with at least one source finger; at least one drain rail with at least one drain finger; and at least one serpentine gate having a plurality of gate fingers, said serpentine gate serpentining between said at least one source finger and said at least one drain finger; and at least one feedforward capacitor symmetrically coupled with said FET via at least one gate rail.
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