Laser annealer and laser thin-film forming apparatus
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United States of America Patent
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Issued Date -
Oct 26, 2006
app pub date -
Mar 28, 2006
filing date -
Jun 7, 2002
priority date (Note) -
Abandoned
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Abstract
A laser annealer has a laser light source with at least one GaN-type semiconductor laser and is configured so as to form emission points that emit laser beams having a wavelength of 350 to 450 nm, and a scanning device for scanning an annealing surface with the laser beams. The laser annealer may have a spatial light modulator for modulating the laser beams, and in which pixel portions whose light modulating states change in accordance with control signals are arranged on a substrate. The invention is applied to a laser thin-film forming apparatus. The apparatus has a laser source that has at least one semiconductor laser and is configured so as to form emission points, and an optical system for focusing laser beams into a single beam in the width direction of a substrate.
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