Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same
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United States of America Patent
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Issued Date -
Oct 19, 2006
app pub date -
Sep 28, 2005
filing date -
Apr 13, 2005
priority date (Note) -
Abandoned
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Abstract
Provided are compositions for cleaning a semiconductor device that comprises (a) an inorganic acid in an amount ranging from 10 to 90 wt %, (b) a hydrofluoric acid compound in an amount ranging from 0.0001-1 wt %, (c) an additive in an amount ranging from 0-5 wt %, and (d) residual water to remove residuals of photoresist and metallic etching polymers which are generated in a dry etching process and an ashing process for manufacturing fine patterns of semiconductor device.
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