Method for preparing a deep trench
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United States of America Patent
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app pub date -
Sep 12, 2005
filing date -
Apr 13, 2005
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Abstract
A method for preparing a deep trench first forms a trench in a semiconductor substrate and a stacked structure in the trench, wherein the stacked structure includes at least one nitrogen-containing layer. A phosphorous oxide layer is then formed on the surface of the nitrogen-containing layer. The phosphorous oxide is then transformed into an etchant in a steam atmosphere to remove the nitrogen-containing layer in the trench. The phosphorous oxide layer in the trench is then removed, and the nitrogen-containing layer can be effectively removed. The method further comprises forming a plurality of crystallites on a portion of the nitrogen-containing layer before the phosphorous oxide layer is formed on the surface of the nitrogen-containing layer, which allows the formation of a deep trench with a rough inner sidewall.
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