Silicon carbide product, method for producing same, and method for cleaning silicon carbide product
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United States of America Patent
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Issued Date -
Oct 19, 2006
app pub date -
Jul 7, 2004
filing date -
Jul 29, 2003
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Abandoned
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Abstract
A silicon carbide product is disclosed which is characterized by having a surface with a metal impurity concentration of not more than 1.times.10.sup.11 (atoms/cm.sup.2). Also disclosed are a method for producing such a silicon carbide product and a method for cleaning a silicon carbide product. A silicon carbide having such a highly cleaned surface can be obtained by cleaning it with a hydrofluoric acid, a hydrochloric acid, or an aqueous solution containing a sulfuric acid and a hydrogen peroxide solution. The present invention provides a highly cleaned silicon carbide, and thus enables to produce a semiconductor device which is free from consideration on deterioration in characteristics caused by impurities. Further, when the silicon carbide is used in a unit for semiconductor production or the like, there is such an advantage that an object processed in the unit can be prevented from suffering an adverse affect of flying impurities.
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