Gunn diode
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United States of America Patent
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Issued Date -
Oct 19, 2006
app pub date -
Mar 31, 2006
filing date -
Mar 31, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A Gunn diode having axis A consists of appropriately doped layers which, when a suitable voltage is applied, cause a space charge 6 to traverse a transit region 7 at a microwave frequency. In a typical known Gunn diode, the layers 4, 5 and 7 to 9 extend across the full diameter of the diode, and the space charge 6 is usually depicted as being disc-shaped. There is the disadvantage that the d.c. component of the Gunn effect current associated with a desired harmonic frequency causes undesirable heating. According to the invention, the area through which the current can flow through the elongate structure is tailored to favour the harmonic over the d.c. component, utilising the skin effect. Several ways of doing this are described, notably by making the core of the elongate portion non-conducting, for example, by ion implantation or by its removal by etching.
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