Inrush current control system with soft start circuit and method

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United States of America Patent

SERIAL NO

11153680

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Abstract

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A method of and system for controlling the inrush current generated in a MOSFET of an inrush current control system, wherein the MOSFET includes a source, gate and drain. The dV/dt at the drain of the MOSFET is controlled so as to set the inrush current level as a function of dV/dt, independent of current limit without requiring a separate capacitor connected between the gate and drain of the MOSFET so that the MOSFET can turn on and off more quickly.

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Patent Owner(s)

Patent OwnerAddress
ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANYBAY F1 RAHEEN INDUSTRIAL ESTATE LIMERICK

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Herr, James San Jose, CA 5 39
Hou, Zhizhong Fremont, CA 9 372
Umminger, Christopher Bruce Mountain View, CA 7 86

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