Semiconductor epitaxial wafer
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United States of America Patent
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Issued Date -
Oct 12, 2006
app pub date -
Mar 25, 2004
filing date -
Mar 26, 2003
priority date (Note) -
Abandoned
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Abstract
Multiple epitaxial layers are grown on the front side of a p silicon substrate and no layers are grown on the other side. Among the multiple epitaxial layers the one in contact with the silicon substrate is a first p.sup.+ epitaxial layer. Since the epitaxial layer is in contact with the p.sup.+ layer, gettering can be efficiently done also in a low-temperature device manufacturing process, thereby improving the manufacturing yield of an epitaxial wafer. Therefore the manufacturing cost of an epitaxial wafer is reduced.
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