Methods and structures to form precisely aligned stacks of 3-dimensional stacks with high resolution vertical interconnect
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United States of America Patent
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Issued Date -
Oct 5, 2006
app pub date -
Feb 17, 2006
filing date -
Feb 18, 2005
priority date (Note) -
Abandoned
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Abstract
Methods and structures to form precisely aligned stacks of 3-dimensional stacks with high resolution vertical interconnections, and associated stacks, structures and devices. Viewing ports are formed in a first nanostructure layer through which an alignment pattern on-a second nanostructure layer is visible when the first and second nanostructure layers are held in near contact before attachment. The second nanostructure layer is then aligned with the first nanostructure layer by viewing the alignment pattern through the viewing ports. Once the layers are aligned, the second nanostructure layer is attached to the first nanostructure layer.
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