Optical semiconductor element, method of manufacturing optical semiconductor element and optical module
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United States of America Patent
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Issued Date -
Oct 5, 2006
app pub date -
Aug 31, 2005
filing date -
Mar 16, 2005
priority date (Note) -
Abandoned
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Abstract
An InGaAsP thin film layer having the same index of refraction as a diffraction grating is inserted between a p-type InP clad layer and the diffraction grating composed of an InGaAsP layer. In this structure, the InGaAsP layer is present over an active layer, and the amount of thermal diffusion of dopant to the vicinity of the active layer does not depend on an aperture width or the presence or absence of the diffraction grating when the p-type InP clad layer is grown, thereby obtaining a stable optical output, a threshold current, and slope efficiency.
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