Oxide films containing titanium

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United States of America Patent

SERIAL NO

11317656

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Abstract

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Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.

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ASM INTERNATIONAL N VALMERE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hanninen, Timo Helsinki, FI 6 168
Hatanpaa, Timo Espoo, FI 20 608
Leskela, Markku Espoo, FI 59 3393
Matero, Raija Vantaa, FI 7 209
Rahtu, Antti Helskinki, FI 14 1007
Ritala, Mikko Espoo, FI 97 8656
Vehkamaki, Marko Helsinki, FI 6 557

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