SiC semiconductor device
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United States of America Patent
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N/A
Issued Date -
Sep 28, 2006
app pub date -
Mar 22, 2006
filing date -
Mar 25, 2005
priority date (Note) -
Abandoned
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Abstract
A semiconductor device includes: a passivation film; a first semiconductor layer that has a first main component of 4H--SiC of a first conductivity type; and a second semiconductor layer that has a second main component of 4H--SiC of a second conductivity type. The second semiconductor layer has a pn-junction with the first semiconductor layer. The pn-junction has a junction edge. The first and second semiconductor layers further include a local area that includes the junction edge. The local area has a first principal plane that interfaces with the passivation film. A normal to the first principal plane tilts by a first tilt angle in a range of 25 degrees to 45 degrees from a first axis of [0001] or [000-1] toward a second axis of <01-10>.
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