Method of depositing thin film on substrate using impulse ALD process
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United States of America Patent
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Issued Date -
Sep 21, 2006
app pub date -
Mar 16, 2006
filing date -
Mar 16, 2005
priority date (Note) -
Abandoned
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Abstract
Provided is a method of depositing a thin film on a substrate using an impulse feeding process. The method includes performing a second reaction gas continuous feeding process of continuously feeding a second reaction gas into a chamber in which the substrate is installed, and performing a number of times, during the second reaction gas continuous feeding process, a process cycle including a first reaction gas feeding process of feeding a first reaction gas into the chamber and a first reaction gas purge process of purging the first reaction gas that is not adhered onto the substrate. The second reaction gas continuous feeding process includes a second reaction gas impulse process of feeding the second reaction gas at an impulse flow rate greater than a basic flow rate during the first reaction gas purge process.
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