Method of manufacturing domain inverted crystal

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United States of America Patent

APP PUB NO 20060207496A1
SERIAL NO

10548653

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Abstract

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A first electrode is partially contacted with a domain to be polarization-inverted 2 on one plate face of a nonlinear optical crystal substrate 1, a second electrode is contacted with the other plate face of the substrate, and a polarization inversion voltage is applied between the both electrodes. At this time, the electrode is so formed that the contact area of the first electrode 3 with the plate face satisfies particular conditions, and the domain to be polarization-inverted is entirely or partially polarization-inverted by the application of a polarization inversion voltage. The aforementioned particular conditions are that each contact area 3 is dot-like so that plural contact areas 3 can be present independently within individual domains to be polarization-inverted 2, and individual dot-like contact areas have an area of 0.00785 .mu.m .sup.2-7850 .mu.m.sup.2 and a shape included in a circle having a diameter of 100 .mu.m. As a result, a polarization inverted crystal having high quality can be obtained more easily.

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Patent Owner(s)

Patent OwnerAddress
OXIDE CORPORATION1747-1 MAKIHARA MUKAWA-CHO HOKUTO-SHI YAMANASHI 4080302

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koto, Masahiro Itami-shi, JP 9 122
Maeda, Shigeo Kawanishi-shi, JP 27 367
Taniguchi, Hirokazu Itami-shi, JP 64 497

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