Ceria abrasive for cmp
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United States of America Patent
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Issued Date -
Sep 21, 2006
app pub date -
May 14, 2004
filing date -
May 15, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention relates to a CMP abrasive comprising a ceria slurry and a chemical additive having two or more functional groups by mixing and synthesizing a polymeric molecule and a monomer. Also, the present invention relates to a method for a manufacturing CMP abrasive by providing a ceria slurry, manufacturing a chemical additive having two or more functional groups by mixing and synthesizing of the polymeric molecule and the monomer in a reactor, and mixing said slurry and said chemical additive. Therefore, when the abrasive according to the present invention is used as an STI CMP abrasive, it is possible to apply the abrasive to the patterning process required in the very large scale integration semiconductor process. Furthermore, the CMP abrasive of the present invention has a superior removal rate, superior polishing selectivity, superior within wafer non-uniformity (WIWNU), and minimized occurrence of micro scratches.
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