Silicon dioxide film and process for preparation of the same

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United States of America Patent

APP PUB NO 20060194453A1
SERIAL NO

10550859

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Abstract

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A transparent amorphous silicon dioxide film containing many fine voids, characterized in that the refractive index (for light at .lamda.=500 nm) is in the range of 1.01 to 1.40 and that 80 vol. % or more of the fine voids have a diameter of 5 nm or less, has a low refractive index and excellent physical strength such as high scratch resistance, so that it is advantageously employable as an optical film of an optical device for various uses.

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Patent Owner(s)

Patent OwnerAddress
ORGANIZATION OF SHINSHU UNIVERSITY1-1 ASAHI 3-CHOME MATSUMOTO-SHI NAGANO 390-8621
HIOKI DENKI KABUSHIKI KAISYA81 AZA SAKURAMACHI O-AZA KOIZUMI UEDA-SHI NAGANO 386-1192

International Classification(s)

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  • 2004 Application Filing Year
  • H01L Class
  • 14681 Applications Filed
  • 9246 Patents Issued To-Date
  • 62.98 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2004200520062007200820092010201120122013201420152016201720182019202020210255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harano, Masayuki Nagano, JP 2 7
Murakami, Yasushi Nagano, JP 60 1479
Takasu, Yoshio Nagano, JP 52 686
Taniguchi, Yoshio Nagano, JP 53 676

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Patent Citation Ranking

  • 4 Citation Count
  • H01L Class
  • 2.11 % this patent is cited more than
  • 19 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges651199722376222132986546322210701 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +01002003004005006007008009001000110012001300

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