INTEGRATED CIRCUIT HAVING A SCHOTTKY DIODE WITH A SELF-ALIGNED FLOATING GUARD RING AND METHOD FOR FABRICATING SUCH A DIODE
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United States of America Patent
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Issued Date -
Aug 17, 2006
app pub date -
Jan 27, 2006
filing date -
Feb 11, 2005
priority date (Note) -
Abandoned
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Abstract
The present invention provides an integrated circuit (1) having at least one on-chip silicide-based CMOS Schottky diode (10) comprising a silicon layer forming a substrate (16) in which is formed an implant guard ring (24) between an active Schottky area (28) and a cathode contact area (19), having a silicide layer (26) which forms the active Schottky area (28) and which covers the guard ring (24), characterized in that the silicon substrate (16) comprises a MOS-gate ring (34) between the guard ring (24) and the active Schottky area (28) in order to provide an insulation element between the guard ring (24) and the active Schottky area (28). The invention provides also a transponder comprising such an integrated circuit (1) and a method for fabricating the Schottky diode (10).
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