Method for the formation of a metal film
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United States of America Patent
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Issued Date -
Aug 10, 2006
app pub date -
Mar 29, 2006
filing date -
Mar 27, 2000
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Abandoned
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Abstract
A method for forming a metal film, including bringing a raw material gas containing a halogen into contact with a hot metallic filament, thereby etching the filament with the raw material gas to produce a precursor composed of a metallic component contained in the filament and the halogen contained in the raw material gas, producing an atomic reducing gas by heating a reducing gas to a high temperature, passing the precursor through the atomic reducing gas to remove the halogen from the precursor, and directing the resulting metallic ion or neutral metal onto a substrate to form a thin metal film on the substrate.
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