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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD	HSINCHU

International Classification(s)

• C30B:SINGLE-CRYSTAL GROWTH

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Currie, Matthew T	Brookline, US	98	4196
Fitzgerald, Eugene A	Windham, US	161	6513
Langdo, Thomas A	Framingham, US	55	2764
Vineis, Christopher J	Watertown, US	14	103
Westhoff, Richard	Hudson, US	16	321

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
March 09, 2010	US,7674335,B2   US7674335B2	GRANTED PATENT AS SECOND PUBLICATION
August 10, 2006	US,20060174818,A1   US20060174818A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent Application No: 2006/0174,818

Method of producing high quality relaxed silicon germanium layers

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