Deposition of multilayer structures including layers of germanium and/or germanium alloys
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United States of America Patent
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app pub date -
Aug 1, 2005
filing date -
Jan 28, 2005
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Abstract
A chemical vapor deposition (CVD) process for preparing multilayer structures including Ge or a Ge-containing layer for use in electrical, optical and photovoltaic applications. A preferred Ge precursor is isobutylgermane. The multilayer structures include structures having a layer of Ge formed from isobutylgermane and structures having a layer of SiGe where isobutylgermane is used as a Ge precursor. The instant invention generally includes multilayer structures that include a layer of Ge or a layer of SiGe in combination with a layer of Si. Embodiments include multilayer structures having two or more layers containing an alloy of Si and Ge, where the Si:Ge differs in the two or more layers.
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