Method for producing at least one small opening in a layer on a substrate and components produced according ot said method
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United States of America Patent
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Issued Date -
Jul 27, 2006
app pub date -
Aug 4, 2003
filing date -
Aug 5, 2002
priority date (Note) -
Abandoned
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Abstract
A method is described for producing at least one small opening (10) in a layer on a substrate (1), in particular a semiconductor substrate. The substrate (1) is provided on the upper side (2) with at least one tapering recess (6), which has a tip portion (4) and side walls (5), and the upper side (2) of the substrate (1) is covered at least in the region of the recess (6) with a layer (7) made of an etchable material. According to the invention, the opening (10) is produced from the upper side (2) by selective opening of the layer (7) by means of an anisotropic plasma etching method which is matched to the material of the layer (7), the material, the etching gases and the etching parameters being chosen such that in the region of a tip portion (9) of the layer (7), which tip portion (9) lies on the tip portion (4) of the substrate (1), a greater etching rate is produced than in the region of side walls (8) of the layer (7) which lie on the side walls (5) of the substrate (1). In addition, calibration standards, bending beams and other component parts, which are produced according to this method, are described (FIG. 1).
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