Semiconductor device and method of fabricating the same
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United States of America Patent
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Issued Date -
Jul 27, 2006
app pub date -
Jan 23, 2006
filing date -
Jan 25, 2005
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Abstract
A highly-reliable semiconductor device and a method of fabricating the semiconductor device, while stably carrying out IC test, are proposed. A pad portion after an IC test using a probe is covered with a second passivation film. It is therefore made possible to protect the pad, which has partially been thinned by the IC test, from a chemical solution of wet etching used, after the IC test, for removing a barrier metal. This consequently makes it possible to suppress intrusion of a chemical solution through the pad portion into an IC chip. In the semiconductor device, the pad portion provided for the IC test using the probe and the opening provided for formation of the metal bump electrode are separated. It is therefore made possible to suppress any influence of the probe mark produced by the IC test exerted on the geometry of the metal bump electrode.
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