Semiconducting photo detector structure
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United States of America Patent
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Issued Date -
Jul 27, 2006
app pub date -
Jan 22, 2005
filing date -
Jan 22, 2005
priority date (Note) -
Abandoned
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Abstract
An epitaxial structure for semiconducting photo detectors is provided. The epitaxial structure contains a substrate having a built-in electric circuit, a first and second metallic layers on top of said substrate electrically connected to the corresponding electrical input and output points of the substrate's electric circuit, and a semiconducting photo detecting element as the topmost part for receiving incident lights.
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