Slurry for polishing copper film and method for polishing copper film using the same

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United States of America Patent

APP PUB NO 20050173670A1
SERIAL NO

11051757

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Disclosed are a slurry for polishing a copper film and a method for polishing a copper film using the slurry. A slurry containing H2O2 as an oxidizer and glycine as an inhibitor is prepared. Polishing of a copper film is performed in such a manner that the slurry is provided onto a polishing pad, and a copper film is contacted with the polishing pad. In the copper film polishing, no contamination occurs and surface roughness of the copper film is favorable.

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Patent Owner(s)

  • MAGNACHIP SEMICONDUCTOR, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Myoung Shik Chungcheongbuk-do, KR 2 2

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