Method of Forming A Power Amplifier
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 13, 2006
app pub date -
Mar 21, 2005
filing date -
Jan 13, 2005
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
In a bipolar junction transistor (BJT) process, according to the linearity of an implant dosage and the output characteristics of a power amplifier, the implant dosage in the poly-silicon layer is selected and controlled in order to form different power level silicon germanium (SiGe) based power amplifiers. Cost, complexity, and time of IC manufacture are reduced.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully