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Abstract

A fabrication method is applied to the bipolar integrated circuit, which combines with various patterns of the masks using in the different processes to form a combination mask. By using the combination mask, a silicon dioxide layer is etched to produce the open windows required in the different processes. Thereafter, according to the requirements of different processes, the unused windows are covered with photoresists to avoid the alignment errors resulted from the pattering and etching of different masks. Because the method doesn't need to reserve tolerance for alignment errors, the degree of integration of the semiconductor processes is enhanced and the cost of production is reduced.

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