Water-soluble composition for coating photoresist pattern and method for forming fine patterns using the same
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United States of America Patent
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app pub date -
May 4, 2005
filing date -
Dec 30, 2004
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Abandoned
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Abstract
A composition for coating a photoresist pattern which comprises water and a compound of Formula 1 is coated on a previously formed photoresist pattern, thereby reducing a size of a space or contact hole of photoresist pattern effectively. The method using the composition is applied to all semiconductor processes for forming a fine photoresist pattern. wherein R.sub.1 and R.sub.2 are individually selected from the group consisting of H, linear or branched C.sub.1-C.sub.20 alkyl, linear or branched C.sub.2-C.sub.20 alkyl containing an ester linkage, linear or branched C.sub.2-C.sub.20 alkyl containing a ketone linkage, linear or branched C.sub.2-C.sub.20 alkyl containing a carboxylic acid group, linear or branched C.sub.7-C.sub.20 alkyl phenyl and linear or branched C.sub.3-C.sub.20 alkyl containing a acetal linkage; m is an integer ranging from 0 to 3000; and n is an integer ranging from 10 to 3000.
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