Light emitting device structure having nitride bulk single crystal layer
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United States of America Patent
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Issued Date -
Jun 29, 2006
app pub date -
Dec 11, 2002
filing date -
May 17, 2002
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Abandoned
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Abstract
The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.
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