Semiconductor device manufacturing method and semiconductor manufacturing apparatus
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United States of America Patent
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app pub date -
Jan 11, 2006
filing date -
Nov 24, 1999
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Abstract
A semiconductor device manufacturing method comprises a first step of forming, by a thermal chemical vapor deposition method, a silicon nitride film on an object disposed in a reaction container, with bis tertiary butyl amino silane and NH.sub.3 flowing into the reaction container, and a second step of removing silicon nitride formed in the reaction container, with NF.sub.3 gas flowing into the reaction container.
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