III-nitride light emitting devices fabricated by substrate removal
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United States of America Patent
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Feb 17, 2009
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Jan 10, 2006
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Feb 5, 1999
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Abstract
Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.
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