Apparatus and method to improve resist line roughness in semiconductor wafer processing
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United States of America Patent
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app pub date -
Jan 10, 2006
filing date -
Jan 7, 2003
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Abstract
A process for prohibiting amino group transport from the top surface of a layered semiconductor wafer to a photoresist layer introduces a thin film oxynitride over the silicon nitride layer using a high temperature step of nitrous oxide (N.sub.2O) plus oxygen (O.sub.2) at approximately 300.degree. C. for about 50 to 120 seconds. By oxidizing the silicon nitride layer, the roughness resulting from the adverse affects of amino group transport eliminated. Moreover, this high temperature step, non-plasma process can be used with the more advanced 193 nanometer technology, and is not limited to the 248 nanometer technology. A second method for exposing the silicon nitride layer to an oxidizing ambient, prior to the application of antireflective coating, introduces a mixture of N.sub.2H.sub.2 and oxygen (O.sub.2) ash at a temperature greater than or equal to 250.degree. C. for approximately six minutes. This is followed by an O.sub.2 plasma clean and/or an Ozone clean, and then the subsequent layering of the ARC and photoresist.
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