Plasma reaction chamber and captive silicon electrode plate for processing semiconductor wafers
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United States of America Patent
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Issued Date -
May 25, 2006
app pub date -
Nov 19, 2004
filing date -
Nov 19, 2004
priority date (Note) -
Abandoned
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Abstract
A plasma processing system for etching a semiconductor wafer comprises: 1) a plasma chamber in which the semiconductor wafer may be mounted; 2) an upper ring capable of being mounted on an upper opening of the plasma chamber, wherein a central portion of the upper ring forms a hole; and 3) an electrode plate having a plurality of vias therethrough. The electrode plate is disposed in the hole in the upper ring, wherein the central portion of the upper ring further forms a shelf for supporting the electrode plate in the hole.
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