Reduced particle generation from wafer contacting surfaces on wafer paddle and handling facilities
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United States of America Patent
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Issued Date -
May 18, 2006
app pub date -
Dec 2, 2004
filing date -
Nov 12, 2004
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An ion implanter includes a wafer pad for supporting wafer thereon. The wafer pad is covered by a wafer coating having at least two layers with each layer composed of a different coating material. The top layer may be PTFE, PFA, FEP, or TEFLON polymer layer. The bottom layer may be a layer that is composed of a soft material with a low duometer reading or a vulcanized elastormer layer, or a silicon layer serving the function as a cushion layer. In general, the top layer is a protective layer that has a friction coefficient less than 0.6 and having a roughness less than 0.4 micron when operated in the implanter for loading and unloading the wafer from the wafer pad.
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