Method for fabricating low leakage interconnect layers in integrated circuits
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United States of America Patent
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Issued Date -
May 11, 2006
app pub date -
Nov 9, 2004
filing date -
Nov 9, 2004
priority date (Note) -
Abandoned
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Abstract
A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.
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