Method for forming silicon-germanium in the upper portion of a silicon substrate
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United States of America Patent
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Issued Date -
Apr 27, 2006
app pub date -
Oct 25, 2005
filing date -
Oct 25, 2004
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Abandoned
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Abstract
A method for forming silicon-germanium in the upper portion of a silicon substrate, including the steps of: depositing a germanium layer doped at a concentration in dopant elements greater than 10.sup.19 atoms per cm.sup.3 on a silicon substrate; heating to have the germanium diffuse into the silicon substrate to form a doped silicon-germanium layer in the upper portion of the silicon substrate; and eliminating the germanium layer.
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